maximum ratings: (t a =25c unless otherwise noted) symbol units collector-base voltage v cbo 20 v collector-emitter voltage v ces 20 v emitter-base voltage v ebo 10 v collector current i c 500 ma power dissipation p d 1.2 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 104 c/w electrical characteristics: (t a =25c) symbol test conditions min typ max units i cbo v cb =15v 100 na i ebo v eb =10v 100 na b vces i c =100a 20 v b vcbo i c =100a 20 v v cesat i c =10ma, i b =10a 1.0 v v beon v ce =5.0v, i c =10ma 1.4 v h fe v ce =5.0v, i c =10ma 20k CXTA62 surface mount pnp silicon darlington transistor sot-89 case central semiconductor corp. tm r2 (20-may 2004) description: the central semiconductor CXTA62 is a pnp silicon darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. marking code: full part number
min max min max a 0.055 0.067 1.40 1.70 b c 0.014 0.018 0.35 0.46 d 0.173 0.185 4.40 4.70 e 0.064 0.074 1.62 1.87 f 0.146 0.177 3.70 4.50 g 0.090 0.106 2.29 2.70 h 0.028 0.051 0.70 1.30 j 0.014 0.019 0.36 0.48 k 0.017 0.023 0.44 0.58 l m sot-89 (rev: r4) dimensions symbol inches millimeters 4 4 0.059 0.118 1.50 3.00 central semiconductor corp. tm sot-89 case - mechanical outline CXTA62 surface mount pnp silicon darlington transistor r2 (20-may 2004) lead code: 1) emitter 2) collector 3) base marking code: full part number bottom view
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